Water Oxidation
«返回
2D HfN2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain
- 详细信息
| 标题： | 2D HfN2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain |
| 资源摘要： | Title: 2D HfN2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain Author(s): Mohanta, Manish Kumar; Sarkar, Abir De Source: APPLIED SURFACE SCIENCE, 540: FEB 28 2021 Document Type: Article |
| 资源原始URL | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord&KeyUT=WOS%3A000598371200006 |
| 资源来源机构： | web of science |
| 来源机构所属国家： | America |
| 来源机构性质： | scitific |