Hydrogen Evolution
«返回
GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N-2 into SiO2/Si and SiNx/Si wafers
- 详细信息
标题: | GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N-2 into SiO2/Si and SiNx/Si wafers |
资源摘要: | Title: GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N-2 into SiO2/Si and SiNx/Si wafers Author(s): Aggar, L.; Bradai, D.; Bourezg, Y. I.; et al. Source: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 485: 57-67 DEC 15 2020 Document Type: Article |
资源原始URL | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord&KeyUT=WOS%3A000590695700010 |
资源来源机构: | web of science |
来源机构所属国家: | America |
来源机构性质: | scitific |