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GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N-2 into SiO2/Si and SiNx/Si wafers

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标题: GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N-2 into SiO2/Si and SiNx/Si wafers
资源摘要: Title: GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N-2 into SiO2/Si and SiNx/Si wafers
Author(s): Aggar, L.; Bradai, D.; Bourezg, Y. I.; et al.
Source: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 485: 57-67 DEC 15 2020
Document Type: Article
资源原始URL http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord&KeyUT=WOS%3A000590695700010
资源来源机构: web of science
来源机构所属国家: America
来源机构性质: scitific