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HfO2-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio
- 详细信息
| 标题： | HfO2-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio |
| 资源摘要： | Title: HfO2-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio Author(s): Xing, Boran; Guan, Liao; Yu, Ying; et al. Source: NANOTECHNOLOGY, 30 (34): AUG 23 2019 Document Type: Article |
| 资源原始URL | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord&KeyUT=WOS%3A000470865500001 |
| 资源来源机构： | web of science |
| 来源机构所属国家： | America |
| 来源机构性质： | scitific |