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Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices
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| 标题： | Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices |
| 资源摘要： | Title: Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices Author(s): Lin, Yow-Jon; Wu, Chang-Lin; Ke, Zun-Yuan; et al. Source: INDIAN JOURNAL OF PHYSICS, 94 (8): 1209-1214 AUG 2020 Document Type: Article |
| 资源原始URL | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord&KeyUT=WOS%3A000549723700009 |
| 资源来源机构： | web of science |
| 来源机构所属国家： | America |
| 来源机构性质： | scitific |